Self-consistent Monte Carlo models are indispensable for revealing the device physics and verifying novel device concepts and ideas (see Hess and Kizilyalli 1986, and Jensen et al. HEMTs (which are also called HFETs - for Heterostructure Field Effect Transistors or MODFETs - for Modulation Doped Field Effect Transistors, or even TEGFETs - for Two-dimensional Electron Gas Field Effect Transistors) have been modeled at different levels - from advanced (relying primarily on self-consistent Monte Carlo simulations), to intermediate (utilizing the numerical solutions of phenomenological semiconductor equations), to analytical or semi-analytical (based on the calculation of the drift current and the total sheet charge in the HEMT channel.) These models of varying degrees of sophistication have different applications. This prominence has caused a great deal of activity in the area of HEMT modeling. The High Electron Mobility Transistor (HEMT) is a contender for the coveted place as the fastest solid state device, even though this claim is being challenged from time to time by MESFET technology (see Feng et al.
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